Silicon carbide based quantum networking

Silicon Carbide for Novel Quantum Technology Devices

Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quan...

Silicon Nitride and Silicon Carbide

Quantum decoherence dynamics of divacancy spins in silicon carbide

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find t...

Boron carbide/n-silicon carbide heterojunction diodes

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.